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We report a comprehensive study on the effects of rhenium doping on optical properties and photocarrier dynamics of MoS 2 monolayer, few-layer, and bulk samples. Monolayer and few-layer samples of Re-doped (0.6%) and undoped MoS 2 were fabricated by mechanical exfoliation, and were studied by Raman spectroscopy, optical absorption, photoluminescence, and time-resolved differential reflection measurements. Similar Raman, absorption, and photoluminescence spectra were obtained from doped and undoped samples, indicating that the Re doping at this level does not significantly alter the lattice and electronic structures. Red-shift and broadening of the two phonon Raman modes were observed, showing the lattice strain and carrier doping induced by Re. The photoluminescence yield of the doped monolayer is about 15 times lower than that of the undoped sample, while the photocarrier lifetime is about 20 times shorter in the doped monolayer. Both observations can be attributed to diffusion-limited Auger nonradiative recombination of photocarriers at Re dopants. These results provide useful information for developing a doping strategy of MoS 2 for optoelectronic applications.